2sk1836, 2SK1837 silicon n-channel mos fet ade-208-1326 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current no secondary breakdown suitable for switchingregulator, dc-dc converter outline to-3pl 1. gate 2. drain (flange) 3. source d g s 1 2 3
2sk1836, 2SK1837 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage k1836 v dss 450 v k1837 500 gate to source voltage v gss 30 v drain current i d 50 a drain peak current i d(pulse) * 1 200 a body to drain diode reverse drain current i dr 50 a channel dissipation pch* 2 250 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2sk1836, 2SK1837 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source k1836 v (br)dss 450 v i d = 10 ma, v gs = 0 breakdown voltage k1837 500 gate to source breakdown voltage v (br)gss 30 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 25 v, v ds = 0 zero gate k1836 i dss 250 m av ds = 360 v, v gs = 0 voltage drain current k1837 v ds = 400 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 3.0 v i d = 1 ma, v ds = 10 v static drain to k1836 r ds(on) 0.08 0.10 w i d = 25 a source on state resistance k1837 0.085 0.11 v gs = 10 v* 1 forward transfer admittance |y fs |2235 si d = 25 a v ds = 10 v* 1 input capacitance ciss 8150 pf v ds = 10 v output capacitance coss 2100 pf v gs = 0 reverse transfer capacitance crss 180 pf f = 1 mhz turn-on delay time t d(on) 80 ns i d = 25 a rise time t r 250 ns v gs = 10 v turn-off delay time t d(off) 550 ns r l = 1.2 w fall time t f 220 ns body to drain diode forward voltage v df 1.1 v i f = 50 a, v gs = 0 body to drain diode reverse recovery time t rr 620 ns i f = 50 a, v gs = 0, di f / dt = 100 a / m s note 1. pulse test
2sk1836, 2SK1837 4 400 300 200 100 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature drain to source voltage v (v) drain current i (a) d ds 13 10 30 100 300 1000 0.1 0.3 1 3 10 30 100 pw = 10 ms (1 shot) 10 s m operation in this area is limited by r (on) ds 1 ms ta = 25? 300 1000 dc operation (tc = 25?) 100 ms k1836 k1837 maximum safe operation area drain to source voltage v (v) drain current i (a) 0 4812 16 20 20 40 60 80 100 ds d 8 v 10 v 6 v 5.5 v 5 v 4.5 v pulse test v = 4 v gs typical output characteristics gate to source voltage v (v) drain current i (a) gs d 0 2 4 6 810 20 40 60 80 100 tc = 75? 25? ?25? v = 20 v pulse test ds typical transfer characteristics
2sk1836, 2SK1837 5 gate to source voltage v (v) drain to source saturation voltage v (on) (v) 0 4 8 12 16 20 1 3 2 4 5 ds gs pulse test 50 a 20 a i = 10 a d drain to source saturation voltage vs. gate to source voltage drain current i (a) static drain?ource on state resistance r (on) ( ) w 510 20 50 100 200 500 0.01 0.02 0.05 0.1 0.2 0.5 1 d ds pulse test v = 10, 15 v gs static drain to source on state resistance vs. drain current case temperature tc (?) 0.5 0.4 0.3 0.2 0.1 0 ?0 0 40 80 120 160 static drain?ource on state resistance r (on) ( ) w ds pulse test 20 a i = 50 a d 10 a static drain to source on state resistance vs. temperature drain current i (a) forward transfer admittance |y | (s) fs d 0.5 12 5 10 20 50 0.5 1 2 5 10 20 50 tc = ?25? 25? 75? ds v = 20 v pulse test forward transfer admittance vs. drain current
2sk1836, 2SK1837 6 reverse drain current i (a) reverse recovery time trr (ns) dr 0.5 1 2 5 10 20 50 10 20 50 100 200 500 1000 di / dt = 100 a / s v = 0, ta = 25? m gs body to drain diode reverse recovry time drain to source voltage v (v) capacitance c (pf) ds 010 20 30 40 50 10 100 1000 10000 v = 0 f = 1 mhz gs typical capacitance vs. drain to source voltage ciss ciss crss gate charge g (nc) drain to source voltage v (v) gate to source voltage v (v) ds gs q 0 80 160 240 320 400 100 200 300 400 500 0 4 8 12 16 20 250 v 400 v 250 v 100 v v ds gs v = 100 v dd v = 400 v dd v i = 50 a d dynamic input characteristics v = 10 v,v 30 v pw = 2 s, duty 1 % gs m = . . dd drain current i (a) switching time t (ns) 0.5 1 25 10 20 50 50 100 200 500 1000 2000 5000 d td (off) tf tr td (on) switching characteristics
2sk1836, 2SK1837 7 source to drain voltage v (v) reverse drain current i (a) 0 0.4 0.8 1.2 1.6 2.0 20 60 40 80 100 sd dr 0, ?5 v pulse test v = 10 v gs reverse drain current vs. source drain voltage 10 100 1 m 10 m 100 m 10 0.01 0.03 0.1 0.3 1 3 pulse width pw (s) normalized transient thermal impedance s (t) g m m d = 1 0.5 0.2 0.1 0.05 0.02 1 shot pulse tc = 25? 0.01 1 q ch ?c(t) = s(t) ch ?c ch ?c = 0.5? / w, tc = 25? p d = pw t pw t dm g . q q normalized transient thermal impedance vs. pulse width
2sk1836, 2SK1837 8 vin monitor vout monitor r v 30 v 50 vin 10 v d.u.t dd l = . . w switching time test circuit vin 10 % 90 % 90 % 90 % 10 % td (on) td (off) tr tf vout 10 % waveforms
2sk1836, 2SK1837 9 package dimensions 20.0 0.3 f 3.3 0.2 1.4 2.2 3.0 1.2 5.45 0.5 5.45 0.5 1.0 3.8 7.4 2.8 0.2 0.6 5.0 0.2 6.0 0.2 26.0 0.3 20.0 0.6 2.5 0.3 +0.25 ?.1 +0.25 ?.1 hitachi code jedec eiaj mass (reference value) to-3pl 9.9 g as of january, 2001 unit: mm
2sk1836, 2SK1837 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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